Jianshi Tang

Prof. Jianshi Tang is currently a tenure-track Assistant Professor in the Department of Microelectronics and Nanoelectronics (Institute of Microelectronics) at Tsinghua University, Beijing, where he graduated with a BS degree in 2008. Prof. Tang received his PhD degree in Electrical Engineering from University of California, Los Angeles (UCLA) in 2014. From 2015 to 2019, he worked at IBM T. J. Watson Research Center as Postdoc Researcher and then Research Staff Member, after which he joined Tsinghua University in January 2019. He was awarded the 14th “Young Thousand Talents Plan” of China, and also received many other awards including NT18 “Best Young Scientist Award”, IEEE “Best Lightning Talk”, IBM Invention Achievement Awards, IBM Research Pat Goldberg Memorial Best Paper Award. His main research areas include emerging memory and neuromorphic computing, carbon nanotube electronics and flexible electronics, nanomaterial spintronics, etc. Over the past 10 years, Dr. Tang has published about 60 articles and proceedings in top journals and international conferences, such as Nature Nanotechnology、Nature Electronics、Nature Materials、Science、Nano Letters、ACS Nano、IEDM, etc. His work has been cited over 4000 times. He has also filed more than 30 patent applications, 10 of which have been granted. Dr. Tang served as Technical Committee Member for several international conference, including IEEE-NANO, CMSE, MEAMT, ACMMT, and he is also an active reviewer for many journals such as Nature Communications， Advanced Materials, Nano Letters, ACS Nano, etc.

• Neuromorphic computing with emerging nonvolatile memory and neuromorphic devices
• Three-dimensional monolithic system-on-chip with beyond Si logic, sensor and emerging memory
• Flexible electronics and integrated systems toward smart robotics and brain-machine interface
• Spintronics, scaled logic technology, device physics of nanomaterials, etc

1. J. Tang, et al., “Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges”, Adv. Mater., 201902761 (2019).
2. J. Tang*, D. Bishop, S. Kim, M. Copel, T. Gokmen, T. Todorov, S. Shin, K.-T. Lee, P. Solomon, K. Chan, W. Haensch, J. Rozen, “ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing”, IEDM Tech. Dig., 13.1.1-13.1.4 (2018).
3. J. Tang*, Q. Cao, G. Tulevski, K. Jenkins, L. Nela, D. Farmer, S.-J. Han*, “Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays”, Nature Electronics, 1, 191 (2018).
4. L. Nela#, J. Tang#*, Q. Cao, G. Tulevski, S.-J. Han*, “Large-Area High-Performance Flexible Pressure Sensor with Carbon Nanotube Active Matrix for Electronic Skin”, Nano Lett., 18, 2054 (2018).
5. S.-J. Han#*, J. Tang#, B. Kumar, A. Falk, D. Farmer, G. Tulevski, K. Jenkins, S. Oida, J. Ott, J. Hannon, W. Haensch, “High-Speed Logic Integrated Circuits with Solution-Processed Self-Assembled Carbon Nanotubes”, Nature Nanotech., 12, 861 (2017). (#equal contributions, *corresponding authors)
6. J. Tang*, D. B. Farmer, S. Bangsaruntip, K.-C. Chiu, B. Kumar, S.-J. Han*, “Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs”, Int. Symp. on VLSI Technol. Sys. Appl., pp. 1-2 (2017).
7. J. Tang*, Q. Cao, D. B. Farmer, G. Tulevski, S.-J. Han*, “High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts”, IEEE Trans. Electron Devices, 64, 2744 (2017)
8. J. Tang*, Q. Cao, D. B. Farmer, G. Tulevski, S.-J. Han*, “Carbon Nanotube Complementary Logic with Low-Temperature Processed End-Bonded Metal Contacts”, IEDM Tech. Dig., 5.1.1-5.1.4 (2016).
9. J. Tang*, G. Yu, C.-Y. Wang, L.-T. Chang, W. Jiang, C. He, K. L. Wang*, “Versatile Fabrication of Self-Aligned Nanoscale Hall Devices using Nanowire Masks”, Nano Lett., 16, 3109 (2016).
10. T. Nie*, J. Tang, X. Kou, Y. Gen, S.-W. Lee, X. Zhu, Q. He, L.-T. Chang, K. Murata, Y. Fan, K. L. Wang*, “Enhancing Electric-Field Control of Ferromagnetism through Nanoscale Engineering of high-Tc MnxGe1-x Nanomesh”, Nature Comm., 7, 12866 (2016).
11. Z. Hu, J. Comeras, H. Park, J. Tang, A. Afzali, G. S. Tulevski, J. B. Hannon, M. Liehr, S.-J. Han*, “Physically Unclonable Cryptographic Primitives using Self-Assembled Carbon Nanotubes”, Nature Nanotech., 11, 559 (2016).
12. Y. Fan#*, X. Kou#, P. Upadhyaya#, Q. Shao, L. Pan, M. Lang, X. Che, J. Tang, M. Montazeri, K. Murata, L.-T. Chang, M. Akyol, G. Yu, T. Nie, K. L. Wong, J. Liu, Y. Wang, Y. Tserkovnyak, K. L. Wang*, “Electric-Field Control of Spin-Orbit Torque in a Magnetically Doped Topological Insulator”, Nature Nanotech., 11, 352 (2016).
13. J. Tang*, K. L. Wang*, “Electrical Spin Injection and Transport in Semiconductor Nanowires: Challenges, Progress, and Perspectives”, Nanoscale, 7, 4325 (2015).
14. Q. Cao*, S.-J. Han, J. Tersoff, A. D. Franklin, Y. Zhu, Z. Zhang, G. S. Tulevski, J. Tang, W. Haensch, “End-Bonded Contacts for Carbon Nanotube Transistors with Low, Size-Independent Resistance”, Science, 350, 68 (2015).
15. J. Tang*, L.-T. Chang, X. Kou, K. Murata, E. S. Choi, M. Lang, Y. Fan, Y. Jiang, M. Montazeri, W. Jiang, Y. Wang, L. He*, K. L. Wang*, “Electrical Detection of Spin-Polarized Surface States Conduction in (Bi0.53Sb0.47)2Te3 Topological Insulator”, Nano Lett., 14, 5423 (2014).
16. J. Tang*, T. Nie, K. L Wang, “Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-based Nonvolatile Transpinor”, ECS Transactions, 64, 613 (2014).
17. Y. Fan#, P. Upadhyaya#, X. Kou#, M. Lang, S. Takei, Z. Wang, J. Tang, L. He*, L.-T. Chang, M. Montazeri, G. Yu, W. Jiang, T. Nie, R. N. Schwartz, Y. Tserkovnyak, K. L. Wang*, “Magnetization Switching via Giant Spin-Orbit Torque in a Magnetically Doped Topological Insulator Heterostructure”, Nature Mater., 13, 699 (2014).
18. G. Yu#*, P. Upadhyaya#, Y. Fan, J. G. Alzate, W. Jiang, K. L. Wong, S. Takei, S. A. Bender, L.-T. Chang, Y. Jiang, M. Lang, J. Tang, Y. Wang, Y. Tserkovnyak, P. K. Amiri, K. L. Wang*, “Switching of Perpendicular Magnetization by Spin-Orbit Torques in the Absence of External Magnetic Fields”, Nature Nanotech., 9, 548 (2014).
19. J. Tang#, C.-Y. Wang#, L.-T. Chang, Y. Fan, T. Nie, M. Chan, W. Jiang, Y.-T. Chen, H.-J. Yang, H.-Y. Tuan, L.-J. Chen*, K. L. Wang*, “Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors”, Nano Lett., 13, 4036 (2013).
20. J. Tang#, C.-Y. Wang#, W. Jiang, L.-T. Chang, Y. Fan, M. Chan, C. Wu, M.-H. Hung, P.-H. Liu, H.-J. Yang, H.-Y. Tuan, L.-J. Chen*, K. L. Wang*, “Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn5Ge3 Nanowire”, Nano Lett., 12, 6372 (2012).
21. J. Tang#, C.-Y. Wang#, M.-H. Hung, X. Jiang, L.-T. Chang, L. He, P.-H. Liu, H.-J. Yang, H.-Y. Tuan, L.-J. Chen*, K. L. Wang*, “Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application”, ACS Nano, 6, 5710 (2012).
22. J. Tang*, C.-Y. Wang*, L.-J. Chen*, K. L. Wang*, “Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing”, Proc. IEEE NANO Conf., 1-5 (2012).
23. J. Tang#*, C.-Y. Wang#, F. Xiu, M. Lang, L.-W. Chu, C.-J. Tsai, Y.-L. Chueh, L.-J. Chen*, K. L. Wang*, “Oxide-Confined Formation of Ge Nanowire Heterostructure for High-Performance Transistors”, ACS Nano, 5, 6008 (2011).
24. J. Tang, C.-Y. Wang, F. Xiu, Y. Zhou, L.-J. Chen, K. L. Wang*, “Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing”, Adv. Mater. Sci. Eng., 2011, 316513 (2011).
25. J. Tang#*, C.-Y. Wang#, F. Xiu, A. J. Hong, S. Chen, M. Wang, C. Zeng, H.-J. Yang, H.-Y. Tuan, C.-J. Tsai, L.-J. Chen*, K. L. Wang, “Single-Crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors”, Nanotechnology, 21, 505704 (2010).
26. F. Xiu#, Y. Wang#, J. Kim, A. Hong, J. Tang, A. P. Jacob, J. Zou K. L. Wang*, “Electric-Field-Controlled Ferromagnetism in High-Curie-Temperature Mn0.05Ge0.95 Quantum Dots”, Nature Mater., 9, 337 (2010).